Plasma enhanced Atomic Layer Deposition (PEALD) system suitable for deposition of Al2O3, AlHfO, AlN, SiO2 and SiN

Submitted by smpur-icsr on Fri, 2021-02-12 12:37

Plasma enhanced Atomic Layer Deposition (PEALD) system suitable for deposition of Al2O3, AlHfO, AlN, SiO2and SiNCorrigendum 1 - Changes in technical specification & Extension ofBid Submission DateCorrigendum 2 Extension of Bid Submission Date 

Reference: 
EE/2021/043/ENAK/PEALD SYSTEM
File: 
Tender document
Annexure - V
CPP PROOF
Corrigendum 1
Cpp proof - Corrigendum 1
Corrigendum - 2
CPP Proof - corrigendum 2
Opening Date: 
12/02/21
Closing Date: 
18/03/21
Address: 
The Senior Manager, Project Purchase, I.I.T. Madras, Sardar Patel Road, ICSR Building, 2nd floor, Chennai - 600 036
Keywords: 
Plasma enhanced Atomic Layer Deposition (PEALD) system
Administrative Unit: 
Department of Electrical Engineering